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1/11 may 2002 . stb30nf10 STP30NF10 STP30NF10fp n-channel 100v - 0.038 w - 35a to-220/to-220fp/d 2 pak low gate charge stripfet? ii power mosfet n typical r ds (on) = 0.038 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high-efficiency dc-dc converters n ups and motor control type v dss r ds(on) i d stb30nf10 STP30NF10 STP30NF10fp 100 v 100 v 100 v <0.045 w <0.045 w <0.045 w 35 a 35 a 18 a to-220 1 2 3 to-220fp 1 3 d 2 pa k to-263 (suffix t4) 1 2 3 internal schematic diagram absolute maximum ratings ( ) pulse width limited by safe operating area. (1) i sd 30a, di/dt 400a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 15a, v dd = 30v symbol parameter value unit stb30nf10 STP30NF10 STP30NF10fp v ds drain-source voltage (v gs = 0) 100 v v dgr drain-gate voltage (r gs = 20 k w ) 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 35 18 a i d drain current (continuous) at t c = 100c 25 13 a i dm ( ) drain current (pulsed) 140 72 a p tot total dissipation at t c = 25c 115 30 w derating factor 0.77 0.2 w/c dv/dt (1) peak diode recovery voltage slope 28 v/ns e as (2) single pulse avalanche energy 275 mj v iso insulation withstand voltage (dc) ------ 2000 v t stg storage temperature -55 to 175 c t j operating junction temperature
stb30nf10 STP30NF10 STP30NF10fp 2/11 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic d 2 pak to-220 to-220fp rthj-case thermal resistance junction-case max 1.30 5 c/w rthj-amb t l thermal resistance junction-ambient maximum lead temperature for soldering purpose max 62.5 300 c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 15 a 0.038 0.045 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d = 15 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1180 180 80 pf pf pf
3/11 stb30nf10 STP30NF10 STP30NF10fp switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v i d = 15 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) 15 40 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d = 30 a v gs = 10v 40 8.0 15 55 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 50 v i d = 15 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) 45 10 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 35 140 a a v sd (*) forward on voltage i sd = 30 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a di/dt = 100a/s v dd = 55 v t j = 150c (see test circuit, figure 5) 110 390 7.5 ns nc a electrical characteristics (continued) safe operating area for to-220fp safe operating area for to-220
stb30nf10 STP30NF10 STP30NF10fp 4/11 thermal impedance thermal impedance for to-220fp output characteristics transfer characteristics transconductance static drain-source on resistance
5/11 stb30nf10 STP30NF10 STP30NF10fp gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature
stb30nf10 STP30NF10 STP30NF10fp 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 stb30nf10 STP30NF10 STP30NF10fp dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb30nf10 STP30NF10 STP30NF10fp 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/11 stb30nf10 STP30NF10 STP30NF10fp dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
stb30nf10 STP30NF10 STP30NF10fp 10/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
11/11 stb30nf10 STP30NF10 STP30NF10fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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